The Electronics & Information Technology Department of the Government of Odisha has approved fiscal support for Phase 1 of RIR Power Electronics Limited’s Silicon Carbide (SiC) semiconductor manufacturing facility in the state. The Odisha Computer Application Centre (OCAC), the department’s nodal agency, has approved and notified the fiscal support agreement, enabling pro-rata disbursement of the capital subsidy to the company.The project, with a total estimated cost of approximately Rs 6.18 billion for both Phase 1 and Phase 2, was previously cleared by the State-Level Single Window Clearance Committee (SLSWCC) and the state cabinet during the last financial year.Project Financials and Status:Total project cost: ~Rs 6.18 billionCapital expenditure incurred so far: ~Rs 650 millionEligible government capital subsidy: ~Rs 320 millionDr Harshad Mehta, Chairman & Director of RIR Power Electronics Limited, expressed gratitude to the Government of Odisha for its forward-thinking support:“Their backing empowers us to introduce advanced technologies and modern manufacturing capabilities in Odisha. This initiative creates a strong foundation for innovation, employment, and energy-efficient solutions in electric vehicles, renewable energy, power electronics, and industrial automation across India.”This progress represents a major milestone in RIR’s ambition to emerge as a leading Indian player in high-power semiconductor manufacturing and significantly contribute to the Make in India initiative.The facility will focus on manufacturing high-power SiC MOSFETs, IGBTs, and diodes ranging from 3.3 kV to 20 kV, serving vital sectors such as:Electric Vehicles (EVs)Renewable Energy and Power Grid SystemsPower ElectronicsIndustrial AutomationSilicon Carbide semiconductors, renowned for their superior performance and energy efficiency, are poised to transform power-driven technologies, strengthen domestic manufacturing capacity, and drive sustainable industrial growth across India.